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| MJL3281A (NPN) MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features * * * * * * * * * * * Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency Pb-Free Packages are Available Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwith http://onsemi.com Benefits 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS MARKING DIAGRAM Applications Home * High-End Consumer Audio Products * Amplifiers Home Receivers Professional Audio Amplifiers Theater and Stadium Sound Systems Public Address Systems (PAs) 1 2 3 MJLxxxxA AYYWWG TO-264 CASE 340G STYLE 2 xxxx A YY WW G 3 1 EMITTER BASE 2 COLLECTOR = 3281 or 1302 = Location Code = Year = Work Week = Pb-Free Package MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 260 260 5.0 260 15 25 1.5 200 1.43 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/C C MJL1302A ORDERING INFORMATION Device MJL3281A MJL3281AG Package TO-264 TO-264 (Pb-Free) TO-264 TO-264 (Pb-Free) Shipping 25 Units/Rail 25 Units/Rail 25 Units/Rail 25 Units/Rail MJL1302AG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol RJC Max 0.625 Unit C/W Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. (c) Semiconductor Components Industries, LLC, 2005 1 October, 2005 - Rev. 9 Publication Order Number: MJL3281A/D MJL3281A (NPN) MJL1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 260 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 100 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) fT 30 Cob - 600 - pF MHz hFE 75 75 75 75 45 VCE(sat) - 3 150 150 150 150 - Vdc IS/b 4 1 - - Adc VCEO(sus) 260 ICBO - IEBO - 5 50 Adc - Adc Vdc Symbol Min Max Unit http://onsemi.com 2 MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS PNP MJL1302A f T, CURRENT BANDWIDTH PRODUCT (MHz) 50 VCE = 10 V 40 30 20 10 0 TJ = 25C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 5V f T, CURRENT BANDWIDTH PRODUCT (MHz) 60 50 40 30 20 10 0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC, COLLECTOR CURRENT (AMPS) 10 NPN MJL3281A VCE = 10 V 5V Figure 1. Typical Current Gain Bandwidth Product PNP MJL1302A 1000 VCE = 5.0 V hFE , DC CURRENT GAIN 1000 Figure 2. Typical Current Gain Bandwidth Product NPN MJL3281A VCE = 5.0 V hFE , DC CURRENT GAIN TJ = 100C 100 -25 C 25C TJ = 100C 100 -25 C 25C 10 0.05 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 0.05 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain PNP MJL1302A 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 TJ = 25C IC/IB = 10 VBE(sat) 2.5 2.0 1.5 TJ = 25C IC/IB = 10 Figure 4. DC Current Gain NPN MJL3281A VBE(sat) 1.0 0.5 0 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 5. Typical Saturation Voltages http://onsemi.com 3 Figure 6. Typical Saturation Voltages MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS PNP MJL1302A VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) TJ = 25C VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 10 TJ = 25C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) NPN MJL3281A VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 7. Typical Base-Emitter Voltage Figure 8. Typical Base-Emitter Voltage PNP MJL1302A 10000 Cib 10000 NPN MJL3281A Cib C, CAPACITANCE (pF) 1000 Cob C, CAPACITANCE (pF) 1000 Cob TJ = 25C ftest = 1 MHz 100 0.1 1.0 10 100 100 0.1 TJ = 25C ftest = 1 MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 9. MJL1302A Typical Capacitance Figure 10. MJL3281A Typical Capacitance 100 10 ms 10 1 sec 1.0 250 ms 0.1 50 ms There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1000 IC , COLLECTOR CURRENT (AMPS) 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Active Region Safe Operating Area http://onsemi.com 4 MJL3281A (NPN) MJL1302A (PNP) PACKAGE DIMENSIONS TO-3PBL (TO-264) CASE 340G-02 ISSUE J Q -B- 0.25 (0.010) M TB M -T- C U N A R 1 2 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 L P K F 2 PL G W D 3 PL 0.25 (0.010) M J H TB S DIM A B C D E F G H J K L N P Q R U W STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MJL3281A/D |
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